Datasheet4U Logo Datasheet4U.com

HFD3N80 N-Channel MOSFET

HFD3N80 Description

HFD3N80/HFU3N80 Dec 2005 HFD3N80/HFU3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 2.5 A .

HFD3N80 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V  100% Avalanche Teste

📥 Download Datasheet

Preview of HFD3N80 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HFD3N80
Manufacturer
SemiHow
File Size
1.14 MB
Datasheet
HFD3N80-SemiHow.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • HFD3 - SUBMINIATURE SIGNAL RELAY (Hongfa)
  • HFD3-V - SUBMINIATURE SIGNAL RELAY (Hongfa Technology)
  • HFD3020 - TTL Output Receiver (Honeywell)
  • HFD3022 - Silicon PIN Photodiode (Honeywell)
  • HFD3023 - Detector Fibre Optic (Honeywell)
  • HFD3026 - Analog Output Receiver (Honeywell)
  • HFD3029 - Schmitt Input / Non-Inverting TTL Output Receiver (Honeywell)
  • HFD3041-102 - Fiber Optic LAN Components (Honeywell)

📌 All Tags

N-Channel MOSFET SemiHow
SemiHow HFD3N80-like datasheet