HFP630, Shantou Huashan
Tstg Tj VD S S VDGR VG S ID PD
Ta=25
(RGS=1M ) Tc=25
T c =25
Ta=25
N-Channel Enhancement Mode Field Effect Transistor
HFP630
TO-220
55~150 55~150
.
HFP630, SemiHow
HFP630
July 2005
HFP630
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A
FEATURES
Originative New Design Superior Avalanche R.
HFP634, SemiHow
HFP634
July 2005
HFP634
250V N-Channel MOSFET
BVDSS = 250 V RDS(on) typ ȍ ID = 8.1 A
FEATURES
Originative New Design Superior Avalanche.
