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HFP6N90 Datasheet - SemiHow

HFP6N90 N-Channel MOSFET

HFP6N90 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFP6N90-SemiHow.pdf

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Datasheet Details

Part number:

HFP6N90

Manufacturer:

SemiHow

File Size:

1.15 MB

Description:

N-channel mosfet.

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