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SM4N60C - 600V N-Channel MOSFET

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Datasheet Details

Part number	SM4N60C
Manufacturer	SemiMOS
File Size	610.32 KB
Description	600V N-Channel MOSFET
Datasheet	SM4N60C-SemiMOS.pdf

SM4N60C Product details

Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=15nC (Typ. ).
BVDSS=600V,ID=4A.
RDS(on) : 2.2 Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100.

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Other Datasheets by SemiMOS

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Published: Mar 30, 2025 |