SM4N60S-D Features
* Low Intrinsic Capacitances.
* Excellent Switching Characteristics.
* Extended Safe Operating Area.
* Unrivalled Gate Charge :Qg=13.3nC (Typ.).
* BVDSS=600V,ID=4A
* RDS(on) : 2.3 Ω (Max) @VG=10V
* 100% Avalanche Tested TO‐251 TO‐252 1.Gate
Datasheet Details
SM4N60S-D, SM4N60S-I
SemiMOS
849.71 KB
600v n-channel mosfet.
This datasheet PDF includes multiple part numbers: SM4N60S-D, SM4N60S-I.
Please refer to the document for exact specifications by model.
SM4N60S-D Distributor
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