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SM4N60S - 600V N-Channel MOSFET

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Datasheet Details

Part number	SM4N60S
Manufacturer	SemiMOS
File Size	788.27 KB
Description	600V N-Channel MOSFET
Datasheet	SM4N60S-SemiMOS.pdf

SM4N60S Product details

Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=13.3nC (Typ. ).
BVDSS=600V,ID=4A.
RDS(on) : 2.3 Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=1.

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Other Datasheets by SemiMOS

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Published: Mar 30, 2025 |