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SM4N65S-D

650V N-Channel MOSFET

SM4N65S-D Features

* Low Intrinsic Capacitances.

* Excellent Switching Characteristics.

* Extended Safe Operating Area.

* Unrivalled Gate Charge :Qg=13.7nC (Typ.).

* BVDSS=650V,ID=4A

* RDS(on) : 2.8 Ω (Max) @VG=10V

* 100% Avalanche Tested TO‐251 TO‐252 1.Gate

SM4N65S-D Datasheet (1.41 MB)

Preview of SM4N65S-D PDF

Datasheet Details

Part number:

SM4N65S-D

Manufacturer:

SemiMOS

File Size:

1.41 MB

Description:

650v n-channel mosfet.

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TAGS

SM4N65S-D 650V N-Channel MOSFET SemiMOS

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