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SM4N60S-I 600V N-Channel MOSFET

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Description

SM4N60S-I/SM4N60S-D 600V N-Channel MOSFET SM4N60S-I SM4N60S-D SM4N60S-I/SM4N60S-D KONGSON .

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Datasheet Specifications

Part number
SM4N60S-I
Manufacturer
SemiMOS
File Size
849.71 KB
Datasheet
SM4N60S-I-SemiMOS.pdf
Description
600V N-Channel MOSFET

Features

* Low Intrinsic Capacitances.
* Excellent Switching Characteristics.
* Extended Safe Operating Area.
* Unrivalled Gate Charge :Qg=13.3nC (Typ. ).
* BVDSS=600V,ID=4A
* RDS(on) : 2.3 Ω (Max) @VG=10V
* 100% Avalanche Tested TO‐251 TO‐252 1.Gate

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