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SM4N60S-I

600V N-Channel MOSFET

SM4N60S-I Features

* Low Intrinsic Capacitances.

* Excellent Switching Characteristics.

* Extended Safe Operating Area.

* Unrivalled Gate Charge :Qg=13.3nC (Typ.).

* BVDSS=600V,ID=4A

* RDS(on) : 2.3 Ω (Max) @VG=10V

* 100% Avalanche Tested TO‐251 TO‐252 1.Gate

SM4N60S-I Datasheet (849.71 KB)

Preview of SM4N60S-I PDF

Datasheet Details

Part number:

SM4N60S-I

Manufacturer:

SemiMOS

File Size:

849.71 KB

Description:

600v n-channel mosfet.

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TAGS

SM4N60S-I 600V N-Channel MOSFET SemiMOS

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