HFP640 Datasheet, Transistor, Shantou Huashan

✔ HFP640 Features

1- G 2-D 3-S
18A,200V,RDS(on)

✔ HFP640 Application

such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom

PDF File Details

Shantou Huashan manufacturer logo

Part number:

HFP640

Manufacturer:

Shantou Huashan

File Size:

352.58kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, s

📥 Download PDF (352.58kb)

📁 Related Datasheet

HFP640 - 200V N-Channel MOSFET (SemiHow)
HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A FEATURES Originative New Design Superior Avalanche .

HFP640A - N-Channel MOSFET (SemiHow)
HFP640A_HFS640A Oct 2016 HFP640A / HFS640A 200V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Ve.

HFP640G - N-Channel MOSFET (SemiHow)
HFP640G Feb 2015 HFP640G 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18 A FEATURES Originative New Design Superior Avalanche .

HFP644 - 250V N-Channel MOSFET (SemiHow)
HFP644 Dec 2005 HFP644 250V N-Channel MOSFET BVDSS = 250 V RDS(on) typ ȍ ID = 14 A FEATURES Originative New Design Superior Avalanche R.

HFP60N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor █ Applications • Servo motor control. • Pow.

HFP630 - N-Channel Enhancement Mode Field Effect Transistor (Shantou Huashan)
Tstg Tj VD S S VDGR VG S ID PD Ta=25 (RGS=1M ) Tc=25 T c =25 Ta=25 N-Channel Enhancement Mode Field Effect Transistor HFP630 TO-220 55~150 55~150 .

HFP630 - 200V N-Channel MOSFET (SemiHow)
HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A FEATURES Originative New Design Superior Avalanche R.

HFP630A - 200V N-Channel MOSFET (SemiHow)
HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolo.

HFP634 - 250V N-Channel MOSFET (SemiHow)
HFP634 July 2005 HFP634 250V N-Channel MOSFET BVDSS = 250 V RDS(on) typ ȍ ID = 8.1 A FEATURES Originative New Design Superior Avalanche.

HFP6N60U - N-Channel MOSFET (SemiHow)
HFP6N60U HFP6N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Ver.

TAGS

HFP640 N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan