BB501 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB501 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB501C - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB501M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB502 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB502 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB502C - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB502M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB503 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
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BB555- Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance)
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Silicon Variable Capacitance Diode
q q q
BB 515
For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance
Type BB 515
Ordering Code (tape and reel) Q62702-B607
Pin Configuration 1 2 C A
Marking white S
Package SOD-123
Maximum Ratings Parameter Reverse voltage Reverse voltage (R ≥ 5 kΩ) Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
≤
Symbol VR VRM IF Top Tstg
Values 30 35 20 – 55 … + 150
Unit V mA
– 55 … + 150 ˚C
450
K/W
Semiconductor Group
1
10.94
BB 515
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
BB515 Datasheet
