CFY35-20 Datasheet, Converters), Siemens Semiconductor Group

PDF File Details

Part number:

CFY35-20

Manufacturer:

Siemens Semiconductor Group

File Size:

33.35kb

Download:

📄 Datasheet

Description:

Gaas fet (low noise high gain for low-noise front end amplifiers for dbs down converters).

TAGS

📁 Related Datasheet

CFY35-23 - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) (Siemens Semiconductor Group)
GaAs FET CFY 35 ________________________________________________________________________________________________________ Datasheet * Low noise * Hi.

CFY35 - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) (Siemens Semiconductor Group)
GaAs FET CFY 35 ________________________________________________________________________________________________________ Datasheet * Low noise * Hi.

CFY30 - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) (Siemens Semiconductor Group)
GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet * Low noise ( Fm.

CFY25 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis.

CFY25 - HiRel X-Band GaAs MOSFET (Infineon)
CFY25 HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f.

CFY25-17 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis.

CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis.

CFY25-20 - HiRel X-Band GaAs MOSFET (Infineon)
CFY25 HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f.

CFY25-20P - HiRel X-Band GaAs MOSFET (Infineon)
CFY25 HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f.

CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis.