Other Datasheets by Siemens Semiconductor Group
- CFY35-20 - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
- CFY35 - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
- CFY30 - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
- CFY25 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
- CFY25-17 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
- CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)