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HYB3116405BT-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB3116405BT-50 Description

3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information * * * 4 .
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns).

HYB3116405BT-50 Features

* include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families. The HYB3116405BTL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type HYB 3117405BJ-50 HYB 3117405BJ-60 HYB 3117405BJ-70 HYB 3117405BT-50 HYB 31174

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4-Bit Dynamic RAM Refresh Siemens Semiconductor Group
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