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HYB3116405BT-60 - 3.3V 4M x 4-Bit EDO-Dynamic RAM

The HYB3116405BT-60 by Siemens Semiconductor Group is a 3.3V 4M x 4-Bit EDO-Dynamic RAM. Below is the official datasheet preview.

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Official preview page of the HYB3116405BT-60 3.3V 4M x 4-Bit EDO-Dynamic RAM datasheet (Siemens Semiconductor Group).

Datasheet Details

Part number HYB3116405BT-60
Manufacturer Siemens Semiconductor Group
File Size 285.45 KB
Description 3.3V 4M x 4-Bit EDO-Dynamic RAM
Datasheet download datasheet HYB3116405BT-60_SiemensSemiconductorGroup.pdf
Additional preview pages of the HYB3116405BT-60 datasheet.

HYB3116405BT-60 Product details

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) LP-DRAM (access time 50 ns) LP-DRAM (access time 60 ns) LP-DRAM (access time 70 ns) Semiconductor Group 2 HYB 3116(7)405BJ/BT(L) -50/-60/-70 3.3V 4Mx4-DRAM Vcc I/O1 I/O2 WE RAS N.C.A10 A0 A1 A2

Features

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