The HYB314100BJ-70 by Siemens Semiconductor Group is a 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM. Below is the official datasheet preview.
| Part number | HYB314100BJ-70, HYB-314 |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| File Size | 1.13 MB |
| Description | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| Datasheet |
 HYB-314-100.pdf
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| Note |
This datasheet PDF includes multiple part numbers: HYB314100BJ-70, HYB-314. Please refer to the document for exact specifications by model. |
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3.3 V DRAM (access time 50 ns) 3.3 V DRAM (access time 60 ns) 3.3 V DRAM (access time 70 ns) 3.3 V Low Power DRAM (access time 50 ns) 3.3 V Low Power DRAM (access time 60 ns) 3.3 V Low Power DRAM (access time 70 ns) Semiconductor Group 2 HYB 314100BJ/BJL-50/-60/-70 3.3V 4M x 1 DRAM Pin Configuration (top view) P-SOJ-26/20-5 Pin Names A0-A10 RAS CAS WE DI DO Address Input Row Address Strobe Column Address Strobe Read/Write Input Data In Data Out Power Supply (+ 3.3 V) Ground (0 V) No Conne
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