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HYB314100BJBJL-50- Datasheet - Siemens Semiconductor Group

4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

HYB314100BJBJL-50- Features

* include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Ordering Information Type HYB 314100BJ-50 HYB 314100BJ-60 HYB 314100BJ-70 HYB 314100BJL-50 HYB 314100BJL-60 HYB 314100BJL-70 Ordering Code Q67100-Q2035 Q67100-Q2037 Q67100-Q2039 on request

HYB314100BJBJL-50- General Description

3.3 V DRAM (access time 50 ns) 3.3 V DRAM (access time 60 ns) 3.3 V DRAM (access time 70 ns) 3.3 V Low Power DRAM (access time 50 ns) 3.3 V Low Power DRAM (access time 60 ns) 3.3 V Low Power DRAM (access time 70 ns) Semiconductor Group 2 HYB 314100BJ/BJL-50/-60/-70 3.3V 4M x 1 DRAM Pin Configur.

HYB314100BJBJL-50- Datasheet (1.13 MB)

Preview of HYB314100BJBJL-50- PDF

Datasheet Details

Part number:

HYB314100BJBJL-50-

Manufacturer:

Siemens Semiconductor Group

File Size:

1.13 MB

Description:

4m x 1-bit dynamic ram low power 4m x 1-bit dynamic ram.
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information 4.

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TAGS

HYB314100BJBJL-50- 1-Bit Dynamic RAM Low Power 1-Bit Dynamic RAM Siemens Semiconductor Group

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