HYB314265BJ-50, HYB-314 Datasheet (Siemens Semiconductor Group)

HYB314265BJ-50, HYB-314, 256K x 16-Bit EDO-Dynamic RAM

Truth Table RAS H L L L L L L L L LCAS H H L H L L H L L UCAS H H H L L H L L L WE H H H H H L L L H OE H H L L L H H H H I/O1-I/O8 High-Z High-Z Dout High-Z Dout Din Don't care Din High-Z I/O9-I/O16 High-Z High-Z High-Z Dout Dout Don't care Din Din High-Z Operation Standby Refresh Lower byte read

256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature EDO - Hyper Page Mode Performance: -400 -40 69 40 10 20 15 66 -45 79 45 12 22 18 55 -50 89 50 13 25 20 50 ns ns ns ns ns MHz Power Supply: HYB 514265BJ-400 HYB 514265BJ-40 HYB 514265BJ-45 HYB 514265BJ-50 +5 V +5 V +5 V +5 V ±5% ±10% ±10% ±10% HYB 314265BJ(L)-45 +3.3 V

HYB314265BJ-50 Features

* mand to CAS lead time Data setup time Data hold time Data to CAS low delay tWCH tWP tWCS tRWL tCW