SFH464 - GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Siemens Semiconductor Group

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Datasheet Details

Part number	SFH464
Manufacturer	Siemens Semiconductor Group
File Size	40.70 KB
Description	GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
Datasheet	SFH464_SiemensSemiconductorGroup.pdf

SFH464 Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value 40 + 80 3 50 1 140 450 160 Einheit Unit °C V mA A mW K/W K/W Top; Tstg VR IF IFSM Ptot RthJA RthJC Semiconductor Group 2 1998-07-15 SFH 464 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge d

Features

Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidity category in acc. with DIN 40040 GQG q Component subjected to aperture measurement (E 7800) q q q q q q q Anteil q Kathode galvanisch mit dem Gehäuseboden verbunden Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Kurze Schaltzeiten Gehäusegleich mit BP 103, LD 242 Anwendungsklassen nach DIN 40040 GQG Lochb.

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Published: May 20, 2005 |