SFH464 GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Siemens Semiconductor Group

Description

GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 464 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7.
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µ.

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Datasheet Specifications

Part number: SFH464
Manufacturer: Siemens Semiconductor Group
File Size: 40.70 KB
Datasheet: SFH464_SiemensSemiconductorGroup.pdf
Description: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Features

* Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidity category in acc. with DIN 40040 GQG q Component subjected to aperture measurement (E 7800) q q q q q q q

Applications

* q Photointerrupters q Fiber optic transmission Wechsellichtbetrieb bis 5 MHz q LWL Typ Type SFH 464 E7800 Bestellnummer Ordering Code Q62702-Q1745 Gehäuse Package 18 A3 DIN 41876 (TO-18), Bodenplatte, klares EpoxyGießharz, Anschlüsse im 2.54-mm-Raster (1/10’’), Anodenkennzeichnung: Nase am Gehäu

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SFH464 GaAlAs-Lumineszenzdiode 660 GaAlAs Light Emitting Diode 660 Siemens Semiconductor Group

Siemens Semiconductor Group SFH464-like datasheet