SFH464 Datasheet (Siemens Semiconductor Group) - GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

SFH464, GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value * 40 + 80 3 50 1 140 450

SFH464 Features

* Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidity category in acc. with DIN 40040 GQG q Component subjected to aperture measurement (E 7800) q q q q q q q