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SFH464 GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

SFH464 Description

GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 464 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7.
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µ.

SFH464 Features

* Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidity category in acc. with DIN 40040 GQG q Component subjected to aperture measurement (E 7800) q q q q q q q

SFH464 Applications

* q Photointerrupters q Fiber optic transmission Wechsellichtbetrieb bis 5 MHz q LWL Typ Type SFH 464 E7800 Bestellnummer Ordering Code Q62702-Q1745 Gehäuse Package 18 A3 DIN 41876 (TO-18), Bodenplatte, klares EpoxyGießharz, Anschlüsse im 2.54-mm-Raster (1/10’’), Anodenkennzeichnung: Nase am Gehäu

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Datasheet Details

Part number
SFH464
Manufacturer
Siemens Semiconductor Group
File Size
40.70 KB
Datasheet
SFH464_SiemensSemiconductorGroup.pdf
Description
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

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📌 All Tags

GaAlAs-Lumineszenzdiode 660 GaAlAs Light Emitting Diode 660 Siemens Semiconductor Group
Siemens Semiconductor Group SFH464-like datasheet