SFH495P GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Siemens Semiconductor Group

Description

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 29 27 5.0 4.2 Anode 2.54 mm spacing 5.9 5.5 0.6 0.4 0.8 0.4 Area not flat C.
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Stoßstrom, tp = 200 µs, D = 0 Surge current Verlus.

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Datasheet Specifications

Part number: SFH495P
Manufacturer: Siemens Semiconductor Group
File Size: 43.77 KB
Datasheet: SFH495P_SiemensSemiconductorGroup.pdf
Description: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features

* q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high Wirkungsgrad Laserdiode in diffusem Gehäuse Besonders geeignet für Impulsbetrieb bei hohen Strömen Hohe Zuverlässigkeit Gegurtet lieferbar current q High reliability q Available o

Applications

* q Data transfer q Remote controls q For drive and control circuits Semiconductor Group 1 1998-09-18 feo06652 fex06971 1.8 1.2 3.85 3.35 ø5.1 ø4.8 0.6 0.4 SFH 495 P SFH 4552 Typ Type SFH 495 P Bestellnummer Ordering Code Q62703-Q7891 Gehäuse Package 5-mm-LED-Gehäuse (T 1 3/4), plan, schw

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SFH495P GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Siemens Semiconductor Group

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