Datasheet Details
- Part number
- HYB3117805BSJ-50
- Manufacturer
- Siemens Semiconductor Group
- File Size
- 176.79 KB
- Datasheet
-
HYB3117805BSJ-50_SiemensSemiconductorGroup.pdf
- Description
- 2M x 8-Bit Dynamic RAM 2k Refresh
5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM Pin Names and Configuration A0 - A10 A0 - A9 RAS OE I/O1 - I/O8 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply + 5 V for HYB 5117800 + 3.3 V for HYB 3117805 Ground (0 V) Not Connected V CC I/O1 I/O2 I/O3 I/O4 WE RAS N.C.A10 A0 A1 A2 A3 V CC P-SOJ-28 400 mil 28 V SS 27 I/O8 26 I/O7 25 I/O6 24 I/O5 23 CAS 22 OE 21
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