SGTQ75V65FDB1P7

650V FIELD STOP IGBT

Silan Microelectronics

* low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES

* 75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A

* Low conduction loss

* Ultra-fast switching

* High input impedance

* Tjmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT se

SGTQ75V65FDB1P7

Silan Microelectronics

413.86 KB

650v field stop igbt.

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SGTQ75V65FDB1P7 650V FIELD STOP IGBT Silan Microelectronics

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