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SGTQ50T65SDM1P7 Datasheet - Silan Microelectronics

650V FIELD STOP IGBT

* low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES

* AEC-Q101 qualified

* 50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A

* Low conduction loss

* Fast switching

* High input impedance

* TJmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOM

SGTQ50T65SDM1P7

Silan Microelectronics

537.79 KB

650v field stop igbt.

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