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SGTQ50T65SDM1P7 650V FIELD STOP IGBT

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Description

Silan Microelectronics SGTQ50T65SDM1P7_Datasheet 50A, 650V FIELD STOP IGBT .
The SGTQ50T65SDM1P7 field stop IGBT adopts Silan Field Stop III technology.

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Features

* low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES
* AEC-Q101 qualified
* 50A, 650V, VCE(sat)(typ. )=1.65V@IC=50A
* Low conduction loss
* Fast switching
* High input impedance
* TJmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOM

SGTQ50T65SDM1P7 Distributors

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650V FIELD STOP IGBT Silan Microelectronics
Silan Microelectronics SGTQ50T65SDM1P7-like datasheet