SGTQ120V65SDB1PW 650V FIELD STOP IGBT

Silan Microelectronics

Description

Silan Microelectronics SGTQ120V65SDB1PW_Datasheet 120A, 650V FIELD STOP IGBT .
The SGTQ120V65SDB1PW field stop IGBT adopts Silan Field Stop 5 technology.

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Datasheet Specifications

Part number: SGTQ120V65SDB1PW
Manufacturer: Silan Microelectronics
File Size: 628.53 KB
Datasheet: SGTQ120V65SDB1PW-SilanMicroelectronics.pdf
Description: 650V FIELD STOP IGBT

Features

* low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES
* 120A, 650V, VCE(sat)(typ. )=1.42V@IC=120A
* Low conduction loss
* Fast switching
* High input impedance
* TJmax=175C C 2 1 G 3 E 1 23 TO-247P-3L NOMENCLATURE IGBT seri

SGTQ120V65SDB1PW Distributors

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SGTQ120V65SDB1PW 650V FIELD STOP IGBT Silan Microelectronics

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