SGTQ120V65SDB1PW

650V FIELD STOP IGBT

Silan Microelectronics

* low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES

* 120A, 650V, VCE(sat)(typ.)=1.42V@IC=120A

* Low conduction loss

* Fast switching

* High input impedance

* TJmax=175C C 2 1 G 3 E 1 23 TO-247P-3L NOMENCLATURE IGBT seri

SGTQ120V65SDB1PW

Silan Microelectronics

628.53 KB

650v field stop igbt.

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SGTQ120V65SDB1PW 650V FIELD STOP IGBT Silan Microelectronics

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