SGTQ50V65UF1S7 650V FIELD STOP IGBT

Silan Microelectronics

Description

Silan Microelectronics SGTQ50V65UF1S7_Datasheet 50A, 650V FIELD STOP IGBT .
The SGTQ50V65UF1S7 field stop IGBT adopts Silan Field Stop 5 technology.

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Datasheet Specifications

Part number: SGTQ50V65UF1S7
Manufacturer: Silan Microelectronics
File Size: 512.47 KB
Datasheet: SGTQ50V65UF1S7-SilanMicroelectronics.pdf
Description: 650V FIELD STOP IGBT

Features

* low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES
* 50A, 650V, VCE(sat)(typ. )=1.75V@IC=50A
* Low conduction loss
* Fast switching
* High input impedance
* TJmax=175C 1 G C Tab 2 3~7 E Tab 1 7 TO-263-7L NOMENCLATURE

SGTQ50V65UF1S7 Distributors

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SGTQ50V65UF1S7 650V FIELD STOP IGBT Silan Microelectronics

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