SGTQ50V65UF1S7

650V FIELD STOP IGBT

Silan Microelectronics

* low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES

* 50A, 650V, VCE(sat)(typ.)=1.75V@IC=50A

* Low conduction loss

* Fast switching

* High input impedance

* TJmax=175C 1 G C Tab 2 3~7 E Tab 1 7 TO-263-7L NOMENCLATURE

SGTQ50V65UF1S7

Silan Microelectronics

512.47 KB

650v field stop igbt.

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SGTQ50V65UF1S7 650V FIELD STOP IGBT Silan Microelectronics

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