SGTQ40V65SDB2S7

650V FIELD STOP IGBT

Silan Microelectronics

* low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES

* 40A, 650V, VCE(sat)(typ.)=1.35V@IC=40A

* Low conduction loss

* Fast switching

* High input impedance

* TJmax=175C 1 G C Tab 2 3~7 E Tab 1 7 TO-263-7L NOMENCLATURE

SGTQ40V65SDB2S7

Silan Microelectronics

548.96 KB

650v field stop igbt.

📁 Related Datasheet

SGTQ40T120SDB2P7 1200V FIELD STOP IGBT (Silan Microelectronics)

SGTQ120V65SDB1PW 650V FIELD STOP IGBT (Silan Microelectronics)

SGTQ200V75SDB1PW 750V FIELD STOP IGBT (Silan Microelectronics)

SGTQ50T65SDM1P7 650V FIELD STOP IGBT (Silan Microelectronics)

SGTQ50V65UF1S7 650V FIELD STOP IGBT (Silan Microelectronics)

SGTQ75V65FDB1P7 650V FIELD STOP IGBT (Silan Microelectronics)

SGTQ75V65FDB2P7 650V FIELD STOP IGBT (Silan Microelectronics)

SGT03U13 (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)

SGT06U13 (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)

SGT10T60SD1F 600V FIELD STOP IGBT (Silan Semiconductors)

TAGS

SGTQ40V65SDB2S7 650V FIELD STOP IGBT Silan Microelectronics

Image Gallery