SVD9N65T Datasheet (Silan Microelectronics)

SVD9N65T, 650V N-CHANNEL MOSFET

SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide super

SVD9N65T Features

* ∗ 9A,650V,RDS(on)(typ.)=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE SVD9N65T/F ORDERING SPECIFICATIONS Part No. SVD9N65T SVD9N65F Package TO-220-3L TO-220F-3L Marking SVD9N65T SVD9N65F Material Pb free Pb free Packing Tube Tube HANGZHO