SVF4N90MJ, SVF4N90F Datasheet (Silan Microelectronics)

SVF4N90MJ, SVF4N90F, 900V N-CHANNEL MOSFET

SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switchin

SVF4N90MJ Features

* 4A,900V,RDS(on)(typ.)=2.7@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability ORDERING INFORMATION Part No. SVF4N90F SVF4N90MJ SVF4N90T SVF4N90DTR Package TO-220F-3L TO-251J-3L TO-220-3L TO-252-2L Marking SVF4N90F SVF4N90 SVF4N90T SVF4N90D 2