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SVF4N90T, SVF4N90F Datasheet - Silan Microelectronics

SVF4N90T 900V N-CHANNEL MOSFET

SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switchin.

SVF4N90T Features

* 4A,900V,RDS(on)(typ.)=2.7@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability ORDERING INFORMATION Part No. SVF4N90F SVF4N90MJ SVF4N90T SVF4N90DTR Package TO-220F-3L TO-251J-3L TO-220-3L TO-252-2L Marking SVF4N90F SVF4N90 SVF4N90T SVF4N90D 2

SVF4N90F-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVF4N90T, SVF4N90F. Please refer to the document for exact specifications by model.
SVF4N90T Datasheet Preview Page 2 SVF4N90T Datasheet Preview Page 3

Datasheet Details

Part number:

SVF4N90T, SVF4N90F

Manufacturer:

Silan Microelectronics

File Size:

290.01 KB

Description:

900v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVF4N90T, SVF4N90F.
Please refer to the document for exact specifications by model.

SVF4N90T Distributor

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SVF4N90T SVF4N90F 900V N-CHANNEL MOSFET Silan Microelectronics