SVF6N70MJG Datasheet (Silan Microelectronics)

SVF6N70MJG, 700V N-CHANNEL MOSFET

SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perform

SVF6N70MJG Features

* 6A,700V,RDS(on(typ.)=1.35@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262-3L 123 TO-251N-3L 12 3 TO-251J-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVF6N70MJG SVF6N70DTR SVF6N70K SVF6N70MN