SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perform
SVF6N70N Features
* 6A,700V,RDS(on(typ.)=1.35@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262-3L 123 TO-251N-3L 12 3 TO-251J-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVF6N70MJG SVF6N70DTR SVF6N70K SVF6N70MN
SVF6N70MJG-SilanMicroelectronics.pdf
Datasheet Details
SVF6N70N, SVF6N70MJG
Silan Microelectronics
370.24 KB
700v n-channel mosfet.
This datasheet PDF includes multiple part numbers: SVF6N70N, SVF6N70MJG.
Please refer to the document for exact specifications by model.
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