SVGP20110NS, SVGP20110NT Datasheet - Silan Microelectronics

SVGP20110NS 200V N-CHANNEL MOSFET

SVGP20110NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely.

SVGP20110NS Features

* 88A, 200V, RDS(on)(typ.)=9.6m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220-3L 1 3 TO-263-2L TO-247-3L KEY PERFORMANCE PARAM

SVGP20110NT-SilanMicroelectronics.pdf

SVGP20110NS Datasheet Preview — This datasheet PDF includes multiple part numbers: SVGP20110NS, SVGP20110NT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVGP20110NS, SVGP20110NT

Manufacturer:

Silan Microelectronics

File Size:

446.36 KB

Description:

200v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVGP20110NS, SVGP20110NT.
Please refer to the document for exact specifications by model.

SVGP20110NS Distributor

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SVGP20110NS SVGP20110NT 200V N-CHANNEL MOSFET Silan Microelectronics