SVGP066R1NL5, SVGP066R1NL5-SilanMicroelectronics Datasheet - Silan Microelectronics

SVGP066R1NL5 60V N-CHANNEL MOSFET

SVGP066R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used.

SVGP066R1NL5 Features

* 71A, 60V, RDS(on)(typ.)=5.1m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 5 6 7 8 1 2 3 4 4 3 2 1 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVGP066R1NL5TR Package PDFN-8-5X6X0.95-1.27 Marking P06

SVGP066R1NL5-SilanMicroelectronics_removed.pdf

SVGP066R1NL5 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVGP066R1NL5, SVGP066R1NL5-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVGP066R1NL5, SVGP066R1NL5-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

280.25 KB

Description:

60v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVGP066R1NL5, SVGP066R1NL5-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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TAGS

SVGP066R1NL5 SVGP066R1NL5-SilanMicroelectronics 60V N-CHANNEL MOSFET Silan Microelectronics

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