SVGP02R58NL5 Datasheet (Silan Microelectronics)

SVGP02R58NL5, 25V N-CHANNEL MOSFET

SVGP02R58NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used

SVGP02R58NL5 Features

* 294A, 25V, RDS(on)(typ.)=0.48m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMAN