SVGP069R5NSA Datasheet (Silan Microelectronics)

SVGP069R5NSA, 60V N-CHANNEL MOSFET

SVGP069R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used

SVGP069R5NSA Features

* 14A, 60V, RDS(on)(typ.)=8m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 4. Gate 1、2、3. Source 5、6；7、8. Drain 4 5678 12 3 SOP-8-225-1.27 NOMENCLATURE SVGPXXXRXNX Silan Low voltage SGT MOS products Process Version, P denotes PASSIVATIO