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SVGP069R5NSA Datasheet - Silan Microelectronics

SVGP069R5NSA 60V N-CHANNEL MOSFET

SVGP069R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used .

SVGP069R5NSA Features

* 14A, 60V, RDS(on)(typ.)=8mī—@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 4. Gate 1、2、3. Source 5、6īŧ›7、8. Drain 4 5678 12 3 SOP-8-225-1.27 NOMENCLATURE SVGPXXXRXNX Silan Low voltage SGT MOS products Process Version, P denotes PASSIVATIO

SVGP069R5NSA Datasheet (278.34 KB)

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Datasheet Details

Part number:

SVGP069R5NSA

Manufacturer:

Silan Microelectronics

File Size:

278.34 KB

Description:

60v n-channel mosfet.

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SVGP069R5NSA 60V N-CHANNEL MOSFET Silan Microelectronics

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