SVGP082R6NL5A Datasheet - Silan Microelectronics

80V N-CHANNEL MOSFET

SVGP082R6NL5A Features

* 100A, 80V, RDS(on)(typ.)=2.2m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 5 678 8 7 65 1 234 4 3 21 DFN-8-5×6×0.9-1.27 KEY PERFORMANCE PAR

SVGP082R6NL5A General Description

SVGP082R6NL5A is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used.

SVGP082R6NL5A Datasheet (351.10 KB)

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Datasheet Details

Part number:

SVGP082R6NL5A

Manufacturer:

Silan Microelectronics

File Size:

351.10 KB

Description:

80v n-channel mosfet.

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SVGP082R6NL5A 80V N-CHANNEL MOSFET Silan Microelectronics

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SVGP082R6NL5A Features

SVGP082R6NL5A General Description

Datasheet Details

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