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SVS14N60FD2, SVS14N60TD2-SilanMicroelectronics Datasheet - Silan Microelectronics

SVS14N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

2 SVS14N60F(FJ)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superio.

SVS14N60FD2 Features

* 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L

* 14A,600V, RDS(on)(typ.)=0.25@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 123 123 TO-220FJ-3L TO-220-3L ORDERING

SVS14N60TD2-SilanMicroelectronics_removed.pdf

This datasheet PDF includes multiple part numbers: SVS14N60FD2, SVS14N60TD2-SilanMicroelectronics. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVS14N60FD2, SVS14N60TD2-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

306.39 KB

Description:

600v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS14N60FD2, SVS14N60TD2-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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SVS14N60FD2 SVS14N60TD2-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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