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SVS11N60SD2, SVS11N60D Datasheet - Silan Microelectronics

SVS11N60SD2, SVS11N60D, 600V DP MOS POWER TRANSISTOR

SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR .
SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.
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Features

* 11A,600V, RDS(on)(typ. )=0.3@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability ORDERING INFORMATION Part No. SVS11N60DD2TR SVS11N60FD2 SVS11N60SD2 SVS11N60SD2TR SVS11

SVS11N60D-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVS11N60SD2, SVS11N60D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS11N60SD2, SVS11N60D

Manufacturer:

Silan Microelectronics

File Size:

730.65 KB

Description:

600V DP MOS POWER TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: SVS11N60SD2, SVS11N60D.
Please refer to the document for exact specifications by model.

SVS11N60SD2 Distributors

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📌 All Tags

SVS11N60D 600V MOS POWER TRANSISTOR Silan Microelectronics
Silan Microelectronics SVS11N60SD2-like datasheet
SVS11N60FD2
SVS11N60FJD2
SVS11N60KD2
SVS11N60TD2
SVS11N65F