SVS11N60TD2, SVS11N60D Datasheet - Silan Microelectronics

SVS11N60TD2 600V DP MOS POWER TRANSISTOR

SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal be.

SVS11N60TD2 Features

* 11A,600V, RDS(on)(typ.)=0.3@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability ORDERING INFORMATION Part No. SVS11N60DD2TR SVS11N60FD2 SVS11N60SD2 SVS11N60SD2TR SVS11

SVS11N60D-SilanMicroelectronics.pdf

SVS11N60TD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS11N60TD2, SVS11N60D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS11N60TD2, SVS11N60D

Manufacturer:

Silan Microelectronics

File Size:

730.65 KB

Description:

600v dp mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS11N60TD2, SVS11N60D.
Please refer to the document for exact specifications by model.

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SVS11N60TD2 SVS11N60D 600V MOS POWER TRANSISTOR Silan Microelectronics

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