SVS14N60TD2

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVS14N60TD2 Features

* 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L

* 14A,600V, RDS(on)(typ.)=0.25@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 123 123 TO-220FJ-3L TO-220-3L ORDERING

SVS14N60TD2 General Description

2 SVS14N60F(FJ)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superio.

SVS14N60TD2 Datasheet (306.39 KB)

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Datasheet Details

Part number:

SVS14N60TD2

Manufacturer:

Silan Microelectronics

File Size:

306.39 KB

Description:

600v super junction mos power transistor.

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SVS14N60TD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVS14N60TD2 Features

SVS14N60TD2 General Description

Datasheet Details

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