SVS20N60FJD2

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVS20N60FJD2 Features

* 20A, 600V, RDS(on)(typ.)=0.16@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJ-3L 1 2 3 TO-3P ORDERING INFORMATION Part No. SVS20N60FJD2 SVS20N60KD

SVS20N60FJD2 General Description

SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, a.

SVS20N60FJD2 Datasheet (474.58 KB)

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Datasheet Details

Part number:

SVS20N60FJD2

Manufacturer:

Silan Microelectronics

File Size:

474.58 KB

Description:

600v super junction mos power transistor.

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SVS20N60FJD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVS20N60FJD2 Features

SVS20N60FJD2 General Description

Datasheet Details

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