SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics Datasheet - Silan Microelectronics

SVS20N60PND2 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, a.

SVS20N60PND2 Features

* 20A, 600V, RDS(on)(typ.)=0.16@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJ-3L 1 2 3 TO-3P ORDERING INFORMATION Part No. SVS20N60FJD2 SVS20N60KD

SVS20N60FJD2-SilanMicroelectronics_removed.pdf

SVS20N60PND2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

474.58 KB

Description:

600v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

SVS20N60PND2 Distributor

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SVS20N60PND2 SVS20N60FJD2-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics