SVS20N60FJD2-SilanMicroelectronics_removed.pdf
Datasheet Details
Part number:
SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics
Manufacturer:
Silan Microelectronics
File Size:
474.58 KB
Description:
600v super junction mos power transistor.
Note:
This datasheet PDF includes multiple part numbers: SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics.
Please refer to the document for exact specifications by model.
SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics, 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, a
SVS20N60PND2 Features
* 20A, 600V, RDS(on)(typ.)=0.16@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 12 3 TO-220FJ-3L 1 2 3 TO-3P ORDERING INFORMATION Part No. SVS20N60FJD2 SVS20N60KD
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