SVS4N65F Datasheet (Silan Microelectronics)

SVS4N65F, TRANSISTOR

SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior

SVS4N65F Features

* 4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Extreme dv/dt rated

* High peak current capability 123 TO-220F-3L 123 TO-251J-3L ORDERING INFORMATION Part No. SVS4N65F SVS4N65MJ SVS4N65D SVS4N65DTR Package TO-220F-