Description
Silan Microelectronics SVS4N65F/MJ/D_Datasheet 4A, 650V DP MOS POWER TRANSISTOR GENERAL .
SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.
Features
* 4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Extreme dv/dt rated
* High peak current capability
123
TO-220F-3L
123
TO-251J-3L
ORDERING INFORMATION
Part No. SVS4N65F SVS4N65MJ SVS4N65D SVS4N65DTR
Package TO-220F-