SVS4N65MJ Datasheet, Transistor, Silan Microelectronics

✔ SVS4N65MJ Features

4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Extreme dv/dt rated
High peak current capability 123 TO-22

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Part number:

SVS4N65MJ

Manufacturer:

Silan Microelectronics

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357.35kb

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📄 Datasheet

Description:

Transistor. SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technolog

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SVS4N65MJ TRANSISTOR Silan Microelectronics