SVS4N65MJ, SVS4N65F Datasheet - Silan Microelectronics

SVS4N65MJ TRANSISTOR

SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior.

SVS4N65MJ Features

* 4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Extreme dv/dt rated

* High peak current capability 123 TO-220F-3L 123 TO-251J-3L ORDERING INFORMATION Part No. SVS4N65F SVS4N65MJ SVS4N65D SVS4N65DTR Package TO-220F-

SVS4N65F-SilanMicroelectronics.pdf

SVS4N65MJ Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS4N65MJ, SVS4N65F. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS4N65MJ, SVS4N65F

Manufacturer:

Silan Microelectronics

File Size:

357.35 KB

Description:

Transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS4N65MJ, SVS4N65F.
Please refer to the document for exact specifications by model.

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SVS4N65MJ SVS4N65F TRANSISTOR Silan Microelectronics

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