SVS60R190FJDD4

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVS60R190FJDD4 Features

* 123 1 TO-220FJD-3L 3 1.Gate 2.Drain 3.Source 1 2 3 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) TO-220F-3L DFN-4-8x8x0.85-2.0 123 TO-220-3L 1 3 TO-263-2L 12 3 TO-262-3L

* 20A, 600V, RDS(on)(typ.)=0.165@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

SVS60R190FJDD4 General Description

2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high po.

SVS60R190FJDD4 Datasheet (721.07 KB)

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SVS60R190FJDD4

Manufacturer:

Silan Microelectronics

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721.07 KB

Description:

600v super junction mos power transistor.

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SVS60R190FJDD4 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVS60R190FJDD4 Features

SVS60R190FJDD4 General Description

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