SVS60R190SD4, SVS60R190FJDD4 Datasheet - Silan Microelectronics

SVS60R190SD4, SVS60R190FJDD4, 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS t.

Features

* 123 1 TO-220FJD-3L 3 1.Gate 2.Drain 3.Source 1 2 3 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) TO-220F-3L DFN-4-8x8x0.85-2.0 123 TO-220-3L 1 3 TO-263-2L 12 3 TO-262-3L
* 20A, 600V, RDS(on)(typ. )=0.165@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge

SVS60R190FJDD4-SilanMicroelectronics.pdf