SVS60R190SD4

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVS60R190SD4 Features

* 123 1 TO-220FJD-3L 3 1.Gate 2.Drain 3.Source 1 2 3 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) TO-220F-3L DFN-4-8x8x0.85-2.0 123 TO-220-3L 1 3 TO-263-2L 12 3 TO-262-3L

* 20A, 600V, RDS(on)(typ.)=0.165@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

SVS60R190SD4 General Description

2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high po.

SVS60R190SD4 Datasheet (721.07 KB)

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SVS60R190SD4

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Silan Microelectronics

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Description:

600v super junction mos power transistor.

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SVS60R190SD4 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVS60R190SD4 Features

SVS60R190SD4 General Description

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