Description
Silan Microelectronics SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
2
SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS t.
Features
* 123
1
TO-220FJD-3L
3
1.Gate 2.Drain 3.Source 1 2 3
13
TO-252-2L
D(2) G(1)
S(3) S(3) S(3)
TO-220F-3L
DFN-4-8x8x0.85-2.0
123 TO-220-3L
1 3
TO-263-2L
12 3
TO-262-3L
* 20A, 600V, RDS(on)(typ. )=0.165@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
