SVS60R360FJDE3

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVS60R360FJDE3 Features

* 11A, 600V, RDS(on)(typ.)=0.3@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1.Gat

SVS60R360FJDE3 General Description

SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and su.

SVS60R360FJDE3 Datasheet (443.84 KB)

SVS60R360FJDE3 Datasheet Preview — Preview of SVS60R360FJDE3 PDF

Datasheet Details

Part number:

SVS60R360FJDE3

Manufacturer:

Silan Microelectronics

File Size:

443.84 KB

Description:

600v super junction mos power transistor.

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SVS60R360FJDE3 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVS60R360FJDE3 Features

SVS60R360FJDE3 General Description

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