SVS60R360FJDE3, SVS60R360FJHE3 Datasheet - Silan Microelectronics

SVS60R360FJDE3, SVS60R360FJHE3, 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics SVS60R360FJH(FJD)(D)(L8A)E3_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

Features

* 11A, 600V, RDS(on)(typ. )=0.3@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant 2 1 3 1.Gat

SVS60R360FJHE3-SilanMicroelectronics.pdf

SVS60R360FJDE3 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS60R360FJDE3, SVS60R360FJHE3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS60R360FJDE3, SVS60R360FJHE3

Manufacturer:

Silan Microelectronics

File Size:

443.84 KB

Description:

600V SUPER JUNCTION MOS POWER TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: SVS60R360FJDE3, SVS60R360FJHE3.
Please refer to the document for exact specifications by model.

SVS60R360FJDE3 Distributors

📁 Related Datasheet

SVSP65R110FJDHD4 SVSP65R110LHD4 SVSP65R110P7HD4 SVSP65R110SHD4 SVSP65R110THD4

📌 All Tags

SVS60R360FJHE3 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

Silan Microelectronics SVS60R360FJDE3-like datasheet