SVS60R360FJHE3 Datasheet - Silan Microelectronics

SVS60R360FJHE3, 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics SVS60R360FJH(FJD)(D)(L8A)E3_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

Features

* 11A, 600V, RDS(on)(typ. )=0.3@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant 2 1 3 1.Gat

SVS60R360FJHE3-SilanMicroelectronics.pdf