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SVS65R240FJDD4

650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS65R240FJDD4 Features

* 20A, 650V, RDS(on)(typ.)=0.19@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1.

SVS65R240FJDD4 General Description

SVS65R240FJD(D)(L8A)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and supe.

SVS65R240FJDD4 Datasheet (599.19 KB)

Preview of SVS65R240FJDD4 PDF

Datasheet Details

Part number:

SVS65R240FJDD4

Manufacturer:

Silan Microelectronics

File Size:

599.19 KB

Description:

650v super junction mos power transistor.

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SVS65R240FJDD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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