SVS65R240TD4

650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVS65R240TD4 Features

* 20A, 650V, RDS(on)(typ.)=0.19@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1.

SVS65R240TD4 General Description

SVS65R240FJD(D)(L8A)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and supe.

SVS65R240TD4 Datasheet (599.19 KB)

SVS65R240TD4 Datasheet Preview — Preview of SVS65R240TD4 PDF

Datasheet Details

Part number:

SVS65R240TD4

Manufacturer:

Silan Microelectronics

File Size:

599.19 KB

Description:

650v super junction mos power transistor.

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SVS65R240TD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVS65R240TD4 Features

SVS65R240TD4 General Description

Datasheet Details

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Description:

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