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SVS6N80D

TRANSISTOR

SVS6N80D Features

* 6A,800V, RDS(on)(typ.)=0.8Ω@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability ORDERING INFORMATION Part No. SVS6N80T SVS6N80D SVS6N80DTR SVS6N80F Package TO-220-3L T

SVS6N80D General Description

SVS6N80T/D/F is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior .

SVS6N80D Datasheet (413.11 KB)

Preview of SVS6N80D PDF

Datasheet Details

Part number:

SVS6N80D

Manufacturer:

Silan Microelectronics

File Size:

413.11 KB

Description:

Transistor.

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SVS6N80D TRANSISTOR Silan Microelectronics

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