SVS6N80T Datasheet (Silan Microelectronics)

SVS6N80T, TRANSISTOR

SVS6N80T/D/F is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior

SVS6N80T Features

* 6A,800V, RDS(on)(typ.)=0.8Ω@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability ORDERING INFORMATION Part No. SVS6N80T SVS6N80D SVS6N80DTR SVS6N80F Package TO-220-3L T